DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

2 of 6

www.diodes.com

March 2014

© Diodes Incorporated

DMN30H14DLY

Characteristic

Symbol

Value

Units

Drain-Source Voltage

300

V

Gate-Source Voltage

±20

V

Steady

State

0.21

0.16

A

Pulsed Drain Current (10μs pulse, duty cycle

≦1%)

1

A

Maximum Body Diode Continuous Current (Note 6)

2

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation

(Note 5)

0.9

W

(Note 6)

2.2

Thermal Resistance, Junction to Ambient

(Note 5)

132

°C/W

(Note 6)

55

Thermal Resistance, Junction to Case

(Note 6)

9.6

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

300

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1

µA

Gate-Body Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1

⎯

3

V

Static Drain-Source On-Resistance

⎯

6

14

Ω

⎯

6

20

Diode Forward Voltage

⎯

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

⎯

96

⎯

pF

f = 1MHz

Output Capacitance

⎯

5.8

⎯

Reverse Transfer Capacitance

⎯

3.2

⎯

Gate Resistance

⎯

12

⎯

Ω

Total Gate Charge

⎯

4

⎯

nC

Gate-Source Charge

⎯

0.3

⎯

Gate-Drain Charge

⎯

1.9

⎯

Turn-On Delay Time

⎯

3.3

⎯

nS

Turn-On Rise Time

⎯

8.6

⎯

Turn-Off Delay Time

⎯

22

⎯

Turn-Off Fall Time

⎯

12

⎯

Reverse Recovery Time

⎯

43

⎯

nS

Reverse Recovery Charge

⎯

47

⎯

nC

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing