DMN25D0UFA

Document number: DS36253 Rev. 1 - 2

2 of 6

www.diodes.com

February 2014

© Diodes Incorporated

DMN25D0UFA

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

25

V

Gate-Source Voltage

8

(Note 6)

0.32

A

0.25

(Note 5)

0.24

A

Pulsed Drain Current

(Note 7)

1.2

A

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 6)

0.63

W

(Note 5)

0.28

Thermal Resistance, Junction to Ambient

(Note 6)

201

°C/W

(Note 5)

338

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

25

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.6

—

1.2

V

Static Drain-Source On-Resistance

—

—

—

—

4

Ω

5

Forward Transfer Admittance

—

1

-

S

Diode Forward Voltage

—

0.76

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

27.9

—

pF

f = 1MHz

Output Capacitance

—

6.1

—

pF

Reverse Transfer Capacitance

—

2

—

pF

Gate Resistance

—

26.4

—

Ω

Total Gate Charge

—

0.36

—

nC

Gate-Source Charge

—

0.06

—

nC

Gate-Drain Charge

—

0.04

—

nC

Turn-On Delay Time

—

2.9

—

ns

Turn-On Rise Time

—

1.8

—

ns

Turn-Off Delay Time

—

6.6

—

ns

Turn-Off Fall Time

—

2.3

—

ns

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.