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DMN10H220LVT Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN10H220LVT Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMN10H220LVT Document number: DS37958 Rev. 2 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN10H220LVT Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 16 V Continuous Drain Current (Note 5) VGS = 10V (Note 6) TA = +25C TA = +70C ID 2.24 1.79 A (Note 5) TA = +25C TA = +70C ID 1.87 1.50 A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.50 A Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM 6.60 A Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25°C PD 1.67 W TA = +70°C 1.07 Thermal Resistance, Junction to Ambient (Note 6) RθJA 75 °C/W (Note 5) 108 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = 16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1 1.8 2.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) — 172 220 mΩ VGS = 10V, ID = 1.6A 211 250 VGS = 4.5V, ID = 1.3A Diode Forward Voltage VSD — 0.77 1.2 V VGS = 0V, IS = 1.1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 401 — pF VDS = 25V, VGS = 0V f = 1MHz Output Capacitance Coss — 22 — Reverse Transfer Capacitance Crss — 17 — Gate Resistance Rg — 2.1 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 4.1 — nC VDS = 50V, ID = 1.6A Total Gate Charge (VGS = 10V) Qg — 8.3 — Gate-Source Charge Qgs — 1.5 — Gate-Drain Charge Qgd — 2 — Turn-On Delay Time tD(on) — 6.8 — ns VDS = 50V, VGS = 4.5V, RG = 6.8ΩID = 1A Turn-On Rise Time tr — 8.2 — Turn-Off Delay Time tD(off) — 7.9 — Turn-Off Fall Time tf — 3.6 — Reverse Recovery Time trr — 17 — ns IF = 1.1A, di/dt =100A/μs Reverse Recovery Charge Qrr — 9.8 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
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