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DMN10H220LVT Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN10H220LVT
Description  Low Input Capacitance
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN10H220LVT Datasheet(HTML) 2 Page - Diodes Incorporated

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DMN10H220LVT
Document number: DS37958 Rev. 2 - 2
2 of 7
www.diodes.com
April 2015
© Diodes Incorporated
DMN10H220LVT
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
16
V
Continuous Drain Current (Note 5) VGS = 10V
(Note 6)
TA = +25C
TA = +70C
ID
2.24
1.79
A
(Note 5)
TA = +25C
TA = +70C
ID
1.87
1.50
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
1.50
A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
IDM
6.60
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.67
W
TA = +70°C
1.07
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
75
°C/W
(Note 5)
108
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
100
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
1
μA
VDS = 100V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = 16V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1
1.8
2.5
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
172
220
mΩ
VGS = 10V, ID = 1.6A
211
250
VGS = 4.5V, ID = 1.3A
Diode Forward Voltage
VSD
0.77
1.2
V
VGS = 0V, IS = 1.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
401
pF
VDS = 25V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
22
Reverse Transfer Capacitance
Crss
17
Gate Resistance
Rg
2.1
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
4.1
nC
VDS = 50V, ID = 1.6A
Total Gate Charge (VGS = 10V)
Qg
8.3
Gate-Source Charge
Qgs
1.5
Gate-Drain Charge
Qgd
2
Turn-On Delay Time
tD(on)
6.8
ns
VDS = 50V, VGS = 4.5V,
RG = 6.8ΩID = 1A
Turn-On Rise Time
tr
8.2
Turn-Off Delay Time
tD(off)
7.9
Turn-Off Fall Time
tf
3.6
Reverse Recovery Time
trr
17
ns
IF = 1.1A, di/dt =100A/μs
Reverse Recovery Charge
Qrr
9.8
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.


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