HB56SW3272ESK-5 datasheet(9/29 Pages) HITACHI

Part #	HB56SW3272ESK-5

Description	256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module(36 pcs of 16M x 4 components)

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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HB56SW3272ESK-5/6

9

AC Characteristics (Ta = 0 to +70

°C, V

CC = 3.3 V ±0.3 V, VSS = 0 V) *

1, *2, *19

Test Conditions

• Input rise and fall time: 2 ns

• Input levels: V

IL = 0 V, VIH = 3 V

• Input timing reference levels: 0.8 V, 2.0 V

• Output timing reference levels: 0.8 V, 2.0 V

• Output load: 1 TTL gate + C

L (100 pF) (Including scope and jig)

• Ambient illuminance: Under 100 lx

Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)

50 ns

60 ns

Parameter

Symbol Min

Max

Min

Max

Unit

Notes

Random read or write cycle time

t

RC

84

—

104

—

ns

RAS precharge time

t

RP

30

—

40

—

ns

CAS precharge time

t

CP

8

—

10

—

ns

RAS pulse width

t

RAS

50

10000

60

10000

ns

CAS pulse width

t

CAS

8

10000

10

10000

ns

Row address setup time

t

ASR

5—

ns

Row address hold time

t

RAH

8

—

10

—

ns

Column address setup time

t

ASC

0—

ns

Column address hold time

t

CAH

8

—

10

—

ns

RAS to CAS delay time

t

RCD

12

32

14

40

ns

3

RAS to column address delay time

t

RAD

10

20

12

25

ns

4

RAS hold time

t

RSH

18

—

20

—

ns

CAS hold time

t

CSH

35

—

40

—

ns

CAS to RAS precharge time

t

CRP

10

—

10

—

ns

OE to Din delay time

t

OED

18

—

20

—

ns

5

OE delay time from Din

t

DZO

0—

ns

6

CAS delay time from Din

t

DZC

0—

ns

6

Transition time (rise and fall)

t

T

2

50

2

50

ns

7

Similar Part No. - HB56SW3272ESK-5

Manufacturer	Part #	Datasheet	Description
Elpida Memory	HB56UW1673E-5F	215Kb / 27P	128MB Buffered EDO DRAM DIMM 16-Mword 횞 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 횞 4 components)
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More results

Similar Description - HB56SW3272ESK-5

Manufacturer	Part #	Datasheet	Description
Elpida Memory	HB56UW3272ETK-F	222Kb / 27P	256MB Buffered EDO DRAM DIMM 32-Mword 횞 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M 횞 4 components)
Elpida Memory	HB56UW1673E-F	215Kb / 27P	128MB Buffered EDO DRAM DIMM 16-Mword 횞 72-bit, 4k Refresh, 1 Bank Module (18 pcs of 16M 횞 4 components)
Hitachi Semiconductor	HM5116405	316Kb / 35P	16M EDO DRAM (4-MWORD X 4-BIT) 4K REFRESH / 2K REFRESH
Elpida Memory	HB56UW873E-F	214Kb / 27P	64MB Buffered EDO DRAM DIMM 8-Mword 횞 72-bit, 4k Refresh, 1 Bank Module (9 pcs of 8M 횞 8 components)
Hitachi Semiconductor	HM5165165F	510Kb / 37P	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
Siemens Semiconductor G...	HYM72V1625GS-50-	70Kb / 11P	16M x 72-Bit EDO-DRAM Module
Hitachi Semiconductor	HM5116100	217Kb / 24P	16M FP DRAM (16-Mword x 1-bit) 4k Refresh
	HM5118165	336Kb / 33P	16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
	HM5112805F-6	480Kb / 34P	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
Siemens Semiconductor G...	HYM64V1605GU-50	95Kb / 17P	3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module

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HB56SW3272ESK-5 Datasheet(PDF) 9 Page - Hitachi Semiconductor

HB56SW3272ESK-5 Datasheet(HTML) 9 Page - Hitachi Semiconductor

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