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DMN3035LWN Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN3035LWN Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMN3035LWN Document number: DS37528 Rev. 2 - 2 2 of 7 www.diodes.com January 2015 © Diodes Incorporated DMN3035LWN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 5.5 4.4 A Maximum Continuous Body Diode Forward Current (Note 6) IS 1 A Pulsed Drain Current IDM 30 A Avalanche Current (Note 7) L = 0.1mH IAS 13 A Avalanche Energy (Note 7) L = 0.1mH EAS 9.0 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = 25°C PD 0.77 W TA = 70°C 0.49 Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 162 °C/W t<10s 116 Total Power Dissipation (Note 6) TA = 25°C PD 1.78 W TA = 70°C 1.10 Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 71 °C/W t<10s 50 Thermal Resistance, Junction to Case (Note 6) RJC 10.7 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS 1.0 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 1.0 2.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) 26 34 35 45 m Ω VGS = 10V, ID = 4.8A VGS = 4.5V, ID = 4.3A Diode Forward Voltage VSD 0.75 1.1 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 399 pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 57 pF Reverse Transfer Capacitance Crss 50 pF Gate Resistance Rg 1.36 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg 4.5 nC VDS = 15V, ID = 5.8A Total Gate Charge (VGS = 10V) Qg 9.9 nC Gate-Source Charge Qgs 1.2 nC Gate-Drain Charge Qgd 1.8 nC Turn-On Delay Time tD(ON) 3.0 ns VDD = 15V, VGS = 10V, RL = 2.6Ω, RG = 3Ω Turn-On Rise Time tR 3.3 ns Turn-Off Delay Time tD(OFF) 10.6 ns Turn-Off Fall Time tF 2.0 ns Reverse Recovery Time tRR 7.9 ns IF = 4.8A, di/dt = 100A/μs Reverse Recovery Charge QRR 2.4 nC IF = 4.8A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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