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1N4007-13 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part No. 1N4007-13
Description  Standard Recovery Rectifier Diodes
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Maker  DIOTEC [Diotec Semiconductor]
Homepage  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

1N4007-13 Datasheet(HTML) 1 Page - Diotec Semiconductor

  1N4007-13 Datasheet HTML 1Page - Diotec Semiconductor 1N4007-13 Datasheet HTML 2Page - Diotec Semiconductor  
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1N4001 ... 1N4007, 1N4007-13, EM513, EM516, EM518
1N4001 ... 1N4007, 1N4007-13, EM513, EM516, EM518
Standard Recovery Rectifier Diodes
Gleichrichterdioden mit Standard-Sperrverzug
IFAV = 1 A
VF
< 1.1 V
Tjmax = 175°C
VRRM = 50...2000 V
IFSM = 30 A
trr
~ 1500 ns
Version 2015-09-14
~DO-41 / ~DO-204AC
Dimensions - Maße [mm]
Typical Application
50/60 Hz Mains Rectification,
Power Supplies, Polarity Protection
Commercial grade 1)
Typische Anwendung
50/60 Hz Netzgleichrichtung,
Stromversorgungen, Verpolschutz
Standardausführung 1)
Features
VRRM up to 2000 V
Special grade 1N400xGP available
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheit
VRRM bis zu 2000 V
Sonderversion 1N400xGP erhältlich
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped in ammo pack
5000
Gegurtet in Ammo-Pack
Weight approx.
0.4 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 2)
Grenzwerte 2)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N4001
50
50
1N4002
100
100
1N4003
200
200
1N4004
400
400
1N4005
600
600
1N4006
800
800
1N4007
1000
1000
1N4007-13
1300
1300
EM513
1600
1600
EM516
1800
1800
EM518
2000
2000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
TA = 100°C
IFAV
1 A 3)
0.8 A 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
5.4 A 3)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
27/30 A
Rating for fusing – Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
3.6 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 0.77±0.07
Ø 2.6
-0.1
Pb
RoHS


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