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P6SMBJ160A Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # P6SMBJ160A
Description  SMD Transient Voltage Suppressor Diodes
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

P6SMBJ160A Datasheet(HTML) 1 Page - Diotec Semiconductor

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P6SMBJ5.0 ... P6SMBJ170CA
P6SMBJ5.0 ... P6SMBJ170CA
SMD Transient Voltage Suppressor Diodes
SMD Spannungs-Begrenzer-Dioden
PPPM = 600 W
PM(AV) = 5.0 W
Tjmax = 150°C
VWM = 5.0 ... 170 V
VBR
= 6.8 ... 200 V
Version 2016-05-30
~ SMB / ~ DO-214AA
Dimensions - Maße [mm]
Type Code = VWM. Cathode mark
only at unidirectional types
Typ-Code = VWM. Kathoden-Markierung
nur bei unidirektionalen Typen
Typical Applications
Over-voltage protection
ESD protection
Free-wheeling diodes
Commercial grade 1)
Typische Anwendungen
Schutz gegen Überspannung
ESD-Schutz
Freilauf-Dioden
Standardausführung 1)
Features
Uni- and Bidirectional versions
Peak pulse power of 600 W
(10/1000 µs waveform)
Very fast response time
Further available: P6SMB220...550CA
having VBR = 220 ... 550 V
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Uni- und Bidirektionale Versionen
600 W Impuls-Verlustleistung
(10/1000 µs Strom-Impuls)
Sehr schnelle Ansprechzeit
Auch erhältlich: P6SMB220...550CA
mit VBR = 220 ... 550V
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped and reeled
3000 / 13“
Gegurtet auf Rolle
Weight approx.
0.1 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
For bidirectional types (suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (mit Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings 2)
Grenzwerte 2)
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
TA = 25°C
PPPM
600 W 3)
Steady state power dissipation – Verlustleistung im Dauerbetrieb
TT = 75°C
P
M(AV)
5 W
Peak forward surge current (half sine) – Stoßstrom (Sinushalbw.) 60 Hz
TA = 25°C
I
FSM
100 A 4)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Characteristics
Kennwerte
Max. instantaneous forward
voltage Augenblickswert der Durchlass-Spannung
I
F = 25 A
V
BR ≤ 200 V
VF
< 3.0 V 4)
Thermal resistance junction to ambien – Wärmewiderstand Sperrschicht – Umgebung
Thermal resistance junction to terminal – Wärmewiderstand Sperrschicht − Anschluss
RthA
RthT
< 45 K/W 5)
< 15 K/W
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3
Non-repetitive pulse see curve I
PP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I
PP = f (t) / PPP = f (t)
4
Unidirectional diodes only – Nur für unidirektionale Dioden
5
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
1.1
Type
Typ
4.6
± 0.5
5.4
± 0.5
0.15


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