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SUD15N06-90L Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUD15N06-90L Datasheet(HTML) 2 Page - Vishay Siliconix |
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SUD15N06-90L Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71087 S-49634—Rev. D, 20-Sep-99 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 2.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA ZG V l D i C I VDS = 60 V, VGS = 0 V 1 A Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C 50 mA VDS = 60 V, VGS = 0 V, TJ = 175_C 150 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 15 A DiS OS R i b VGS = 10 V, ID = 10 A 0.050 0.065 W Drain Source On State Resistanceb rDS( ) VGS = 10 V, ID = 10 A, TJ = 125_C 0.12 W Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 10 A, TJ = 175_C 0.15 W VGS = 4.5 V, ID = 5 A 0.065 0.090 Forward Transconductanceb gfs VDS = 15 V, ID = 10 A 11 S Dynamic Input Capacitance Ciss V 0 V V 25 V f 1 MH 524 F Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 98 pF Reverse Transfer Capacitance Crss 28 Total Gate Chargec Qg V30 V V 10 V I 15 A 12 20 C Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 15 A 2 nC Gate-Drain Chargec Qgd 3.5 Turn-On Delay Timec td(on) V30 V R 2 W 7 20 Rise Timec tr VDD = 30 V, RL = 2 W I15 A V 10 V R 2 5 W 8 25 ns Turn-Off Delay Timec td(off) DD , L ID ^ 15 A, VGEN = 10 V, RG = 2.5 W 15 40 ns Fall Timec tf 7 20 Source-Drain Diode Ratings and Characteristics (TC = 25_C) Pulsed Current ISM 30 A Diode Forward Voltage VSD IF = 15 A, VGS = 0 V 0.9 1.2 V Reverse Recovery Time trr IF = 15 A, di/dt = 100 A/ms 29 60 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. |
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