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RJP65S05DWA Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJP65S05DWA Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 4 page RJP65S05DWA / RJP65S05DWS R07DS0822EJ0400 Rev.4.00 Page 3 of 3 Nov. 06, 2015 Die Dimension Illustration Part of white Part of dotted line Part of gray Note 1. Note 2. The back of the chip is processed with Au evaporation. Note 3. Recognition, target and any other patterns which are not related to IGBT operation, may be changed without notice. Definition Al pattern Bonding area Final passivation 7.0 5.66 1.31 4.29 Emitter bonding pad (1) Emitter bonding pad (3) Emitter bonding pad (2) Gate bonding pad Unit: mm Ordering Information Orderable Part Number Shipment form RJP65S05DWA-80#W0 Unsawn wafer RJP65S05DWS-80#W0 Sawn wafer |
Similar Part No. - RJP65S05DWA_15 |
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Similar Description - RJP65S05DWA_15 |
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