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NCP1011AP130 Datasheet(PDF) 5 Page - ON Semiconductor

Part # NCP1011AP130
Description  Self-Supplied Monolithic Switcher for Low Standby- Power Offline SMPS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP1011AP130 Datasheet(HTML) 5 Page - ON Semiconductor

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C,
VCC = 8.0 V unless otherwise noted.)
Rating
Pin
Symbol
Min
Typ
Max
Unit
SUPPLY SECTION AND VCC MANAGEMENT
VCC Increasing Level at which the Current Source Turns−off
1
VCCOFF
7.9
8.5
9.1
V
VCC Decreasing Level at which the Current Source Turns−on
1
VCCON
6.9
7.5
8.1
V
VCC Decreasing Level at which the Latch−off Phase Ends
1
VCClatch
4.4
4.7
5.1
V
VCC Decreasing Level at which the Internal Latch is Released
1
VCCreset
3.0
V
Internal IC Consumption, MOSFET Switching at 65 kHz
1
ICC1
0.92
1.1
(Note 2)
mA
Internal IC Consumption, MOSFET Switching at 100 kHz
1
ICC1
0.95
1.15
(Note 2)
mA
Internal IC Consumption, MOSFET Switching at 130 kHz
1
ICC1
0.98
1.2
(Note 2)
mA
Internal IC Consumption, Latch−off Phase, VCC = 6.0 V
1
ICC2
290
mA
Active Zener Voltage Positive Offset to VCCOFF
1
Vclamp
140
200
300
mV
Latch−off Current
NCP1012/13/14
NCP1010/11
1
ILatch
6.3
5.8
7.4
7.3
9.2
9.0
mA
POWER SWITCH CIRCUIT
Power Switch Circuit On−state Resistance
NCP1012/13/14 (Id = 50 mA)
TJ = 25°C
TJ = 125°C
NCP1010/11 (Id = 50 mA)
TJ = 25°C
TJ = 125°C
5
RDSon
11
19
22
38
16
24
35
50
W
Power Switch Circuit and Startup Breakdown Voltage
(ID(off) = 120 mA, TJ = 25°C)
5
BVdss
700
V
Power Switch and Startup Breakdown Voltage Off−state
Leakage Current
TJ = 25°C (Vds = 700 V)
TJ = 125°C (Vds = 700 V)
5
5
IDS(OFF)
50
30
mA
Switching Characteristics
(RL = 50
W, Vds Set for Idrain = 0.7 x Ilim)
Turn−on Time (90%−10%)
Turn−off Time (10%−90%)
5
5
ton
toff
20
10
ns
INTERNAL STARTUP CURRENT SOURCE
High−voltage Current Source, VCC = 8.0 V
NCP1012/13/14
NCP1010/11
1
IC1
5.0
5.0
8.0
8.5
10
10.3
mA
High−voltage Current Source, VCC = 0
1
IC2
10
mA
CURRENT COMPARATOR TJ = 25°C (Note 2)
Maximum Internal Current Setpoint, NCP1010 (Note 3)
5
Ipeak (22)
90
100
110
mA
Maximum Internal Current Setpoint, NCP1011 (Note 3)
5
Ipeak (22)
225
250
275
mA
Maximum Internal Current Setpoint, NCP1012 (Note 3)
5
Ipeak (11)
225
250
275
mA
Maximum Internal Current Setpoint, NCP1013 (Note 3)
5
Ipeak (11)
315
350
385
mA
Maximum Internal Current Setpoint, NCP1014 (Note 3)
5
Ipeak (11)
405
450
495
mA
Default Internal Current Setpoint for Skip−Cycle Operation,
Percentage of Max Ip
ILskip
25
%
Propagation Delay from Current Detection to Drain OFF State
TDEL
125
ns
Leading Edge Blanking Duration
TLEB
250
ns
2. See characterization curves for temperature evolution.
3. Adjust di/dt to reach Ipeak in 3.2
msec.


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