RJP65M06DWA / RJP65M06DWS

R07DS1314EJ0100 Rev.1.00

Page 2 of 3

Nov. 06, 2015

( Tc = 25°C unless otherwise described )

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector current

—

—

1

A

Gate to emitter leak current

—

—

±1

A

Gate to emitter cutoff voltage

4.5

—

6.8

V

Collector to emitter saturation voltage

—

1.55

2.05

V

Input capacitance

Cies

—

6600

—

pF

f = 1 MHz

Output capacitance

Coes

—

270

—

pF

Reverse transfer capacitance

Cres

—

210

—

pF

Total gate charge

Qg

—

410

—

nC



Gate to emitter charge

Qge

—

65

—

nC



Gate to collector charge

Qgc

—

230

—

nC



—

40

—

ns

Rg = 10

, Tj = 150 C

Inductive load

—

70

—

ns

—

270

—

ns

—

70

—

ns

—

50

—

5

—

—

s

Tc = 150

C

Notes: 2. Pulse test.

3. Switching time test circuit and symbol definitions of switching time are shown below.

4. Verified by design.

Switching Time Test Circuit

Waveform

Diode clamp

D.U.T

Rg

L

90%

90%

90%

10%

10%

10%