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RJP1CS28DWA-W0 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJP1CS28DWA-W0 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 4 page RJP1CS28DWA / RJP1CS28DWS Preliminary R07DS1306EJ0100 Rev.1.00 Page 3 of 3 Sep 30, 2015 Die Dimension Unit: mm Illustration Part of white Part of dotted line Part of gray Note 1. Note 2. The back of the chip is processed with Au evaporation. Note 3. Recognition, target and any other patterns which are not related to IGBT operation, may be changed without notice. Definition Al pattern Bonding area Final passivation 11.9 10.25 1.31 8.88 Emitter bonding pad (1) Emitter bonding pad (4) Emitter bonding pad (3) Emitter bonding pad (2) Gate bonding pad Ordering Information Orderable Part Number Shipment form RJP1CS28DWA-80#W0 Unsawn wafer RJP1CS28DWS-80#W0 Sawn wafer |
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