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IRF7832 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF7832
Description  HEXFET Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7832 Datasheet(HTML) 1 Page - International Rectifier

  IRF7832 Datasheet HTML 1Page - International Rectifier IRF7832 Datasheet HTML 2Page - International Rectifier IRF7832 Datasheet HTML 3Page - International Rectifier IRF7832 Datasheet HTML 4Page - International Rectifier IRF7832 Datasheet HTML 5Page - International Rectifier IRF7832 Datasheet HTML 6Page - International Rectifier IRF7832 Datasheet HTML 7Page - International Rectifier IRF7832 Datasheet HTML 8Page - International Rectifier IRF7832 Datasheet HTML 9Page - International Rectifier Next Button
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www.irf.com
1
1/14/04
IRF7832
HEXFET® Power MOSFET
Notes
 through „ are on page 10
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
VDSS
RDS(on) max
Qg
30V
4.0m
:@V
GS = 10V
34nC
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
W
PD @TA = 70°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
°C/W
RθJA
Junction-to-Ambient
f
–––
50
-55 to + 155
2.5
0.02
1.6
Max.
20
16
160
± 20
30
PD - 94594D


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