DMG7410SFG

Document number: DS35108 Rev. 8 - 2

3 of 7

www.diodes.com

July 2015

© Diodes Incorporated

DMG7410SFG

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

30

-

-

V

-

-

0.1

µA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

0.8

1.2

2.0

V

Static Drain-Source On-Resistance

-

13.5

20

m

Ω

-

22

27

Forward Transfer Admittance

-

13.0

-

S

Diode Forward Voltage

-

0.7

1.0

V

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

-

580

-

pF

f = 1.0MHz

Output Capacitance

-

110

-

Reverse Transfer Capacitance

-

70

-

Gate Resistance

-

2.0

3.0

Ω

-

5.3

-

nC

-

11.3

-

Gate-Source Charge

-

1.9

-

Gate-Drain Charge

-

1.9

-

Turn-On Delay Time

-

4.4

-

ns

Turn-On Rise Time

-

4.6

-

ns

Turn-Off Delay Time

-

19.5

-

ns

Turn-Off Fall Time

-

5.8

-

ns

Bodyy Diode Reverse Recovery Time

-

12.6

-

ns

IF=8A, di/dt=500A/µs

Body Diode Reverse Recovery Charge

-

10.5

-

nC

Notes:

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to production testing.

0.1

1

10

100

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

R

Limited

DS(on)

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

P

= 10 s

W

µ

T

= 150°C

T = 25°C

Single Pulse

J(max)

A

0

50

100

150

200

250

300

350

400

t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

0.001 0.01

0.1

1

10

100

1,000

0.0001

Single Pulse

R

= 60 C/W

R

= r

* R

T - T = P * R







JA

JA(t)

(t)

JA

J

A

JA(t)

