DMG3401LSN

Document number: DS35502 Rev. 4 - 2

2 of 6

www.diodes.com

October 2012

© Diodes Incorporated

DMG3401LSN

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

±12

V

Steady

State

-3.0

-2.3

A

Steady

State

-3.7

-2.9

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

-30

A

Maximum Body Diode Continuous Current (Note 6)

-1.5

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation

(Note 5)

0.8

W

(Note 6)

1.2

Thermal Resistance, Junction to Ambient

(Note 5)

159

°C/W

(Note 6)

105

Thermal Resistance, Junction to Case

(Note 6)

36

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-30

-

-

V

-

-

-1.0

µA

Gate-Body Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.5

-1.0

-1.3

V

Static Drain-Source On-Resistance

-

41

50

m

Ω

-

47

60

-

60

85

Forward Transfer Admittance

-

12

-

S

Diode Forward Voltage

-

-0.8

-1.0

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

1326

-

pF

Output Capacitance

-

103

-

Reverse Transfer Capacitance

-

71

-

Gate Resistance

-

7.3

-

Ω

-

11.6

-

nC

-

25.1

-

Gate-Source Charge

-

2

-

Gate-Drain Charge

-

1.7

-

Turn-On Delay Time

-

8

-

nS

Turn-On Rise Time

-

13

-

Turn-Off Delay Time

-

71

-

Turn-Off Fall Time

-

38

-

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing