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3N256-E4 Datasheet(PDF) 1 Page - Vishay Siliconix |
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3N256-E4 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page 2KBPxxM-E4, 3N25x-E4 www.vishay.com Vishay General Semiconductor Revision: 05-Aug-15 1 Document Number: 88532 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Glass Passivated Single-Phase Bridge Rectifier FEATURES • UL recognition file number E54214 • Ideal for printed circuit board • High surge current capability • High case dielectric strength • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, and telecommunication applications. MECHANICAL DATA Case: KBPM Molding compound meets UL 94 V-0 flammability rating Base P/N-E4 - RoHS-compliant, commercial grade Terminals: Silver plated leads, solderable per J-STD-002 and JESD22-B102 Polarity: As marked on body PRIMARY CHARACTERISTICS Package KBPM IF(AV) 2.0 A VRRM 50 V to 1000 V IFSM 60 A IR 5 μA VF at IF = 3.14 A 1.1 V TJ max. 165 °C Diode variations In-line +~ ~− Case Style KBPM + ~ ~ − MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M UNIT 3N253 3N254 3N255 3N256 3N257 3N258 3N259 Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at TA = 55 °C IF(AV) 2.0 A Peak forward surge current single half sine-wave superimposed on rated load IFSM 60 A Rating for fusing (t < 8.3 ms) I2t15 A2s Operating junction and storage temperature range TJ, TSTG -55 to +165 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS 2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M UNIT 3N253 3N254 3N255 3N256 3N257 3N258 3N259 Maximum instantaneous forward voltage drop per diode VF 3.14 A 1.1 V Maximum DC reverse current at rated DC blocking voltage per diode IR TA = 25 °C 5.0 μA TA = 125 °C 500 Typical junction capacitance per diode TJ 4.0 V, 1 MHz 25 pF |
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