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CNY18 Datasheet(PDF) 3 Page - TEMIC Semiconductors |
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CNY18 Datasheet(HTML) 3 Page - TEMIC Semiconductors |
3 / 5 page TELEFUNKEN Semiconductors CNY18 Rev. A1: 20.09.1995 3 (5) Electrical Characteristics Tamb = 25°C Input (Emitter) Parameters Test Conditions Type Symbol Min. Typ. Max. Unit Forward voltage IF = 60 mA VF 1.25 1.7 V Reserve current VR = 3 V IR 0.35 10 mA Output (Detector) Parameters Test Conditions Type Symbol Min. Typ. Max. Unit Collector emitter breakdown voltage IC = 1 mA V(BR)CEO 32 V Collector dark current VCE = 10 V, IF = 0, E = 0 ICEO 2 nA Collector emitter capacitance f = 1 MHz VCE = 0 VCE = 10 V VCE = 30 V CCEO CCEO CCEO 7 3.5 2.5 pF pF pF Coupler Parameters Test Conditions Type Symbol Min. Typ. Max. Unit DC isolation test voltage t = 1 s VIO 1) 500 V Isolation resistance VIO = 500 V, 40% relative humidity RIO 1) 1010 W IC/IF VCE = 5 V, IF = 10 mA Group III IV V CTR CTR CTR 0.25 0.40 0.60 0.50 0.80 1.2 Collector emitter saturation voltage IC = 1 mA, IF = 10 mA VCEsat 0.2 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 W fc 170 kHz Coupling capacitances f = 1 MHz A and C short-cctd. E and C short-cctd. C (E earthed) E (C earthed) Ck Ck Ck 1.4 1.1 0.1 pF pF pF 1) related to standard climate 23/50 DIN 50014 |
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