R07DS1297EJ0100 Rev.1.00

Page 1 of 7

Oct 26, 2015

Data Sheet

NP90N06VDK

60 V – 90 A – N-channel Power MOS FET

Application: Automotive

Description

NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Super low on-state resistance

⎯ R

• Low C

• Designed for automotive application and AEC-Q101 qualified

Outline

Source

Body

Diode

Gate

Drain

TO-252(MP-3ZP)

Equivalent circuit

Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Ordering Information

Part No.

Lead Plating

Packing

Package

1

Pure Sn (Tin)

Tape 2500 p/reel

Taping (E1 type)

TO-252(MP-3ZP)

1

Taping (E2 type)

Note: *1. Pb-free (This product does not contain Pb in the external electrode)

R07DS1297EJ0100

Rev.1.00

Oct 26, 2015