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NP45N06VDK Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # NP45N06VDK
Description  N-channel Power MOS FET
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP45N06VDK Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS1295EJ0100 Rev.1.00
Page 1 of 7
Oct 26, 2015
Data Sheet
NP45N06VDK
60 V – 45 A – N-channel Power MOS FET
Application: Automotive
Description
NP45N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ R
DS(on)1 = 11.6 mΩ MAX. (VGS = 10 V, ID = 23 A)
• Low C
iss: Ciss = 1530 pF TYP. (VDS = 25 V)
• Designed for automotive application and AEC-Q101 qualified
Outline
Source
Body
Diode
Gate
Drain
TO-252(MP-3ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
Lead Plating
Packing
Package
NP45N06VDK-E1-AY *
1
Pure Sn (Tin)
Tape 2500 p/reel
Taping (E1 type)
TO-252(MP-3ZP)
NP45N06VDK-E2-AY *
1
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
R07DS1295EJ0100
Rev.1.00
Oct 26, 2015


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