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2SK3054C-T1B-AT Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SK3054C-T1B-AT Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page R07DS1285EJ0200 Rev.2.00 Page 1 of 6 Jul 16, 2015 Preliminary Data Sheet 2SK3054C N-CHANNEL MOSFET FOR SWITCHING Description The 2SK3054C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA) RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA) Ordering Information Part Number Lead Plating Packing Package 2SK3054C-T1B-A/AT -A:Sn-Bi , -AT:Pure Sn 3000p/Reel SC-70 (3pSSP) Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XM Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS 20 V Drain Current (DC) ID(DC) 200 mA Drain Current (pulse) Note ID(pulse) 800 mA Total Power Dissipation PT 150 mW Channel Temperature Tch 150 C Storage Temperature Tstg 55 to 150 C Note PW 10 s, Duty Cycle 1% R07DS1285EJ0200 Rev.2.00 Jul 16, 2015 |
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