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K4H561638D-TCB0 Datasheet(PDF) 28 Page - Samsung semiconductor

Part # K4H561638D-TCB0
Description  128Mb DDR SDRAM
Download  53 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4H561638D-TCB0 Datasheet(HTML) 28 Page - Samsung semiconductor

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REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
3.3.10 DM masking
The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle, not read
cycle. When the data mask is activated (DM high) during write operation, DDR SDRAM does not accept the
corresponding data.(DM to data-mask latency is zero).
DM must be issued at the rising or falling edge of data strobe.
Command
< Burst Length=8 >
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
DQ
′s
Din 0
Din 1 Din 2
Din 3
tDQSS
DM
Din 4
Din 5 Din 6
Din7
masked by DM=H
2
0
1
5
3
4
8
6
7
CK
CK
6. When terminating a burst Read command, the BST command must be issued LBST (“BST Latency”) clock
cycles before the clock edge at which the output buffers are tristated, where LBST equals the CAS latency
for read operations. This is shown in previous page Figure with examples for CAS latency (CL) of 1.5, 2,
2.5, 3 and 3.5 (only selected CAS latencies are required by the DDR SDRAM standards, the others are
optional).
7. When the burst terminates, the DQ and DQS pins are tristated.
The BST command is not byte controllable and applies to all bits in the DQ data word and the(all) DQS pin(s).
Figure 18. DM masking timing


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