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INCHANGE Semiconductor
isc Product Specification
isc website:www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
2SK2025-01
DESCRIPTION
·Drain Current
–I
D= 4A@ TC=25℃
·Drain Source Voltage-
: VDSS= 600V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulators
·UPS
·DC-DC converters
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
4
A
ID(puls)
Pulsed Drain Current
16
A
Ptot
Total Dissipation@TC=25℃
60
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.08
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
75
℃/W
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