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RB501V-40 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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RB501V-40 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes RB501V -40 Schottky Barrier Diode FEATURES Low current rectifier schottky diode Low voltage, low inductance For power supply MAKING: 4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current IO 0.1 A Non-repetitive Peak Forward Surge Current@t=8.3ms IFSM 1 A Electrical Ratings @Ta=25 ℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 0.55 0.34 V IF=100mA IF=10mA Reverse current IR 30 μA VR=10V Capacitance between terminals CT 6 pF VR=10V, f=1MHZ SOD-323 Junction temperature Tj 125 ℃ Storage temperature Tstg -55~+1 50 ℃ Power dissipation PD 200 mW Thermal Resistance Junction to Ambient RθJA 500 ℃/W www.cj-elec.com 1 D,Mar,2015 The marking bar indicates the cathode |
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