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TIL193 Datasheet(PDF) 1 Page - Texas Instruments

Part No. TIL193
Description  Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel
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Maker  TI [Texas Instruments]
Homepage  http://www.ti.com
Logo TI - Texas Instruments

TIL193 Datasheet(HTML) 1 Page - Texas Instruments

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TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B – APRIL 1989 – REVISED APRIL 1998
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D Gallium-Arsenide-Diode Infrared Source
D Source Is Optically Coupled to Silicon npn
Phototransistor
D Choice of One, Two, or Four Channels
D Choice of Three Current-Transfer Ratios
D High-Voltage Electrical Isolation 3.535 kV
Peak (2.5 kV rms)
D Plastic Dual-In-Line Packages
D UL Listed — File #E65085
description
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and
100% minimum are designated with the suffix A and B respectively.
schematic diagrams
TIL192
1
2
3
4
8
7
6
5
1ANODE
1CATHODE
2ANODE
2CATHODE
1COLLECTOR
1EMITTER
2COLLECTOR
2EMITTER
TIL191
1
2
4
3
ANODE
CATHODE
COLLECTOR
EMITTER
TIL193
1
2
3
4
16
15
14
13
1ANODE
1CATHODE
2ANODE
2CATHODE
1COLLECTOR
1EMITTER
2COLLECTOR
2EMITTER
5
6
7
8
12
11
10
9
3ANODE
3CATHODE
4ANODE
4CATHODE
3COLLECTOR
3EMITTER
3COLLECTOR
3EMITTER
absolute maximum ratings at 25
°C free-air (unless otherwise noted)
Input-to-output voltage (see Note 1)
±3.535 kV peak or dc (±2.5 kV rms)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector-emitter voltage (see Note 2)
35 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter-collector voltage
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode reverse voltage
5 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode continuous forward current at (or below) 25
°C free-air temperature (see Note 3)
50 mA
. . . . . . .
Continuous total power dissipation at (or below) 25
°C free-air temperature:
Phototransistor (see Note 4)
150 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input diode plus phototransistor per channel (see Note 5)
200 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–55
°C to 125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. This rating applies for sine-wave operation at 50 Hz or 60 Hz. This capability is verified by testing in accordance with UL requirements.
2. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 100
°C free-air temperature at the rate of 0.67 mA/°C.
4. Derate linearly to 100
°C free-air temperature at the rate of 2 mW/°C.
5. Derate linearly to 100
°C free-air temperature at the rate of 2.67 mW/°C.
Copyright
© 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.


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