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AMIS41683CANN1RG Datasheet(PDF) 8 Page - ON Semiconductor |
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AMIS41683CANN1RG Datasheet(HTML) 8 Page - ON Semiconductor |
8 / 16 page AMIS−41682, AMIS−41683 www.onsemi.com 8 ELECTRICAL CHARACTERISTICS Definitions All voltages are referenced to GND (Pin 13). Positive currents flow into the IC. Sinking current means that the current is flowing into the pin. Sourcing current means that the current is flowing out of the pin. Table 5. CHARACTERISTICS AMIS−4168x VCC = 4.75 V to 5.25 V, VBAT = 5 V to 36 V, TJ = −40°C to +150°C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit SUPPLIES VCC VBAT ICC Supply Current Normal Operating Mode; VTXD = VCC (Recessive) 1 3.7 6.3 mA Normal Operating Mode; VTXD = 0 V (Dominant); No Load 1 8 12 mA FLAG_VCC Forced Low Power Mode VCC Rising VCC Falling 2.45 4.5 V IBAT Battery Current on Pin BAT In All Modes of Operation; 500 V between RTL − CANL 500 V between RTH − CANH VBAT = WAKE = INH = 5 V to 36 V 10 110 230 mA In Sleepmode VCC = 0 V, VBAT = 12.5 V TA = 70°C 35 42 mA ICC+ IBAT Supply Current Plus Battery Current Low power modes; VCC = 5 V; TA = −40°C to 100°C VBAT = WAKE = INH = 5 to 36V 30 60 mA ICC+ IBAT Supply Current Plus Battery Current Low power modes; VCC = 5 V; TA = 100°C to 150°C VBAT = WAKE = INH = 5 V to 36 V 80 mA FLAG_VBAT Power−on Flag−Level for Pin VBAT For Setting Power−on Flag For Not Setting Power−on Flag 3.5 2.1 2.4 1 V PINS STB, EN AND TXD RPD Pulldown Resistor at Pin EN and STB 1 V 190 360 600 k W TDisTxD Dominant Time−out for TxD Normal Mode; VtxD = 0 V 0.75 4 ms TGoToSleep Minimum Hold−Time for Go−To−Sleep Mode 5 50 ms PIN WAKE IIL Low−Level Input Current VWAKE = 0 V; VBAT = 27V −10 −1 mA Vth(WAKE) Wake−up Threshold Voltage VSTB = 0 V 2.5 3.2 3.9 V TWakeMin Minimum Time on Pin Wake (De- bounce Time) VBAT = 12 V; Low Power Mode; for Rising and Falling Edge 7 38 ms PIN INH DVH High−Level Voltage Drop IINH = $0.18 mA 0.8 V Ileak Leakage Current Sleep mode; VINH = 0 V 1 mA |
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