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IS62C256-70TI Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc

Part # IS62C256-70TI
Description  32K x 8 LOW POWER CMOS STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS62C256-70TI Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc

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IS62C256
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
ISSI®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-45 ns
-70ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
45
70
ns
tSCS
CS to Write End
35
60
ns
tAW
Address Setup Time to Write End
25
60
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Setup Time
0
0
ns
tPWE(4)
WE Pulse Width
25
55
ns
tSD
Data Setup to Write End
20
30
ns
tHD
Data Hold from Write End
0
0
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured
±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CS LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
4. Tested with
OE HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1 (
CS Controlled, OE is HIGH or LOW) (1 )
DATA UNDEFINED
t WC
VALID ADDRESS
t SCS
t PWE1
t PWE2
t AW
t HA
HIGH-Z
t HD
t SA
t HZWE
ADDRESS
CS
WE
DOUT
DIN
DATAIN VALID
t LZWE
t SD
CS_WR1.eps


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