BAS116 datasheet(1/4 Pages) JIANGSU

Part #	BAS116

Description	SWITCHING DIODE

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

www.cj-elec.com

1

B,Oct,2014

SOT-23 Plastic-Encapsulate Diodes

BAS116

SWITCHING DIODE

FEATURES

Low leakage current applications

Medium speed

switching times

MARKING: JV

Maximum Ratings @Ta=25

℃

Parameter

Symbol

Limit

Unit

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

75

Forward Continuous Current

IFM

200

mA

Power Dissipation

PD

225

mW

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55

~+150

℃

Electrical Characteristics @Ta=25

℃

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

Reverse breakdown voltage

V (BR)

75

V

IR=100μA

VF1

0.9

V

IF=1mA

VF2

1

V

IF=10mA

VF3

1.1

V

IF=50mA

Forward voltage

VF4

1.25

V

IF=150mA

Reverse current

IR

5

nA

VR=75V

Diode capacitance

Ctot

2

pF

VR=0V,f=1MHz

Reverse recovery time

trr

3

μ

s

IF=IR=10mA,Irr=0.1×IR ,

RL=100Ω

SOT-23

1

2

3

V

Forward Surge Current @t=8.3ms

Non-Repetitive Peak

IFSM

2.0

A

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BAS116 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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