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BAS116 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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BAS116 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD www.cj-elec.com 1 B,Oct,2014 SOT-23 Plastic-Encapsulate Diodes BAS116 SWITCHING DIODE FEATURES Low leakage current applications Medium speed switching times MARKING: JV Maximum Ratings @Ta=25 ℃ Parameter Symbol Limit Unit Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 Forward Continuous Current IFM 200 mA Power Dissipation PD 225 mW Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~+150 ℃ Electrical Characteristics @Ta=25 ℃ Parameter Symbol Min Typ Max Unit Conditions Reverse breakdown voltage V (BR) 75 V IR=100μA VF1 0.9 V IF=1mA VF2 1 V IF=10mA VF3 1.1 V IF=50mA Forward voltage VF4 1.25 V IF=150mA Reverse current IR 5 nA VR=75V Diode capacitance Ctot 2 pF VR=0V,f=1MHz Reverse recovery time trr 3 μ s IF=IR=10mA,Irr=0.1×IR , RL=100Ω SOT-23 1 2 3 V Forward Surge Current @t=8.3ms Non-Repetitive Peak IFSM 2.0 A |
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