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IDT71V30S35TFI Datasheet(PDF) 7 Page - Integrated Device Technology |
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IDT71V30S35TFI Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 14 page 6.42 IDT71V30S/L High-Speed 1K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges 7 NOTES: 1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 4. 'X' in part number indicates power rating (S or L). 5. Industrial temperatures: for specific speeds, packages and powers contact your sales office. AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(4,5) Symbol Parameter 71V30X25 Com'l Only 71V30X35 Com'l Only 71V30X55 Com'l Only Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 25 ____ 35 ____ 55 ____ ns tEW Chip Enable to End-of-Write 20 ____ 30 ____ 40 ____ ns tAW Address Valid to End-of-Write 20 ____ 30 ____ 40 ____ ns tAS Address Set-up Time 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 20 ____ 30 ____ 40 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 12 ____ 20 ____ 20 ____ ns tHZ Output High-Z Time(1,2) ____ 12 ____ 15 ____ 30 ns tDH Data Hold Time(3) 0 ____ 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 15 ____ 15 ____ 30 ns tOW Output Active from End-of-Write(1,2,3) 0 ____ 0 ____ 0 ____ ns 3741 tbl 10 |
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