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DAC8532IDGKR Datasheet(PDF) 2 Page - Burr-Brown (TI)

[Old version datasheet] Texas Instruments acquired Burr-Brown Corporation. Click here to check the latest version.
Part No. DAC8532IDGKR
Description  Dual Channel, Low Power, 16-Bit, Serial Input DIGITAL-TO-ANALOG CONVERTER
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Manufacturer  BURR-BROWN [Burr-Brown (TI)]
Direct Link  http://www.burr-brown.com
Logo BURR-BROWN - Burr-Brown (TI)

DAC8532IDGKR Datasheet(HTML) 2 Page - Burr-Brown (TI)

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DAC8532
2
SBAS246A
www.ti.com
SPECIFICATION
PACKAGE
TEMPERATURE
PACKAGE
ORDERING
TRANSPORT
PRODUCT
PACKAGE-LEAD
DESIGNATOR(1)
RANGE
MARKING
NUMBER
MEDIA, QUANTITY
DAC8532
MSOP-8
DGK
–40
°C to +105°C
D32E
DAC8532IDGK
Tube, 80
""
"
"
DAC8532IDGKR
Tape and Reel,
2500
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
STATIC PERFORMANCE (1)
Resolution
16
Bits
Relative Accuracy
±0.0987
% of FSR
Differential Nonlinearity
16-Bit Monotonic
±1LSB
Zero-Scale Error
+5
+25
mV
Full-Scale Error
–0.15
–1.0
% of FSR
Gain Error
±1.0
% of FSR
Zero-Scale Error Drift
±20
µV/°C
Gain Temperature Coefficient
±5
ppm of FSR/
°C
Channel-to-Channel Matching
RL = 2kΩ, CL = 200pF
15
mV
PSRR
0.75
mV/V
OUTPUT CHARACTERISTICS (2)
Output Voltage Range
0VREF
V
Output Voltage Settling Time
To
±0.003% FSR
0200H to FD00H
810
µs
RL = 2kΩ; 0pF < CL < 200pF
RL = 2kΩ; CL = 500pF
12
µs
Slew Rate
1V/
µs
Capacitive Load Stability
RL =
470
pF
RL = 2kΩ
1000
pF
Code Change Glitch Impulse
1LSB Change Around Major Carry
20
nV-s
Digital Feedthrough
0.5
nV-s
DC Crosstalk
0.25
LSB
AC Crosstalk
–100
–96
dB
DC Output Impedance
1
Short-Circuit Current
VDD = +5V
50
mA
VDD = +3V
20
mA
Power-Up Time
Coming Out of Power-Down Mode
VDD = +5V
2.5
µs
Coming Out of Power-Down Mode
VDD = +3V
5
µs
AC PERFORMANCE
BW = 20kHz, VDD = 5V
FOUT = 1kHz, 1st 19 Harmonics Removed
SNR
94
dB
THD
67
dB
SFDR
69
dB
SINAD
65
dB
VDD to GND ........................................................................... –0.3V to +6V
Digital Input Voltage to GND ................................. –0.3V to +VDD + 0.3V
VOUTA or VOUTB to GND .......................................... –0.3V to +VDD + 0.3V
Operating Temperature Range ...................................... –40
°C to +105°C
Storage Temperature Range ......................................... –65
°C to +150°C
Junction Temperature Range (TJ max) ........................................ +150°C
Power Dissipation ........................................................ (TJ max — TA)/θJA
θ
JA Thermal Impedance ......................................................... 206°C/W
θ
JC Thermal Impedance .......................................................... 44°C/W
Lead Temperature, Soldering:
Vapor Phase (60s) ............................................................... +215
°C
Infrared (15s) ........................................................................ +220
°C
NOTE: (1) Stresses above those listed under “Absolute Maximum Ratings”
may cause permanent damage to the device. Exposure to absolute maximum
conditions for extended periods may affect device reliability.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru-
ments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
ABSOLUTE MAXIMUM RATINGS(1)
PACKAGE/ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
V
DD = +2.7V to +5.5V. –40°C to +105°C, unless otherwise specified.
DAC8532


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