NCP1612A2 datasheet(5/33 Pages) ONSEMI

Part #	NCP1612A2

Description	Enhanced, High?륟fficiency Power Factor Controller

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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NCP1612A, NCP1612B, NCP1612A1, NCP1612A2, NCP1612A3, NCP1612B2

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5

Figure 2.

VCC

GND

CS/ZCD

NCP1612

ESD Diode

CS/ZCD

Circuitry

7.4 V

R1

Ipin6

Maintain Ipin6

below 5 mA

2 kW

Table 3. TYPICAL ELECTRICAL CHARACTERISTICS

(Conditions: VCC = 15 V, TJ from −40°C to +125°C, unless otherwise specified)

Symbol

Rating

Min

Typ

Max

Unit

START-UP AND SUPPLY CIRCUIT

VCC(on)

Start-up Threshold, VCC increasing:

A, A1, A2 and A3 versions

B and B2 versions

9.75

15.80

10.50

17.00

11.25

18.20

V

VCC(off)

Minimum Operating Voltage, VCC falling

8.5

9.0

9.5

V

VCC(HYST)

Hysteresis (VCC(on) − VCC(off))

A, A1, A2 and A3 versions

B and B2 versions

0.75

6.00

1.50

8.00

−

V

VCC(reset)

VCC level below which the circuit resets

2.5

4.0

6.0

V

ICC(start)

Start-up Current, VCC = 9.4 V

−

20

50

mA

ICC(op)1

Operating Consumption, no switching (VSENSE pin being grounded)

−

0.5

1.0

mA

ICC(op)2

Operating Consumption, 50 kHz switching, no load on DRV pin

−

2.0

3.0

mA

CURRENT CONTROLLED FREQUENCY FOLD-BACK

TDT1

Dead-time, VFFcontrol = 2.60 V (Note 6)

−

0

ms

TDT2

Dead-time, VFFcontrol = 1.75 V

14

18

22

ms

TDT3

Dead-time, VFFcontrol = 1.00 V

32

38

44

ms

TDT4

Dead-time, VFFcontrol = VSKIP_L + 30 mV (NCP1612A3 Only)

@ 25°C

Over the Temperature Range

34.0

32.0

41.5

45.0

47.0

ms

IDT1

FFcontrol Pin current, Vsense = 1.4 V and Vcontrol maximum

180

200

220

mA

IDT2

FFcontrol Pin current, Vsense = 2.8 V and Vcontrol maximum

110

135

160

mA

VSKIP−H

FFcontrol pin Skip Level, VFFcontrol rising

All Versions Except NCP1612A3

NCP1612A3

−

0.75

1.00

0.85

1.05

V

VSKIP−L

FFcontrol pin Skip Level, VFFcontrol falling

All Versions Except NCP1612A3

NCP1612A3

0.55

0.85

0.65

0.90

−

V

HSKIP−L

FFcontrol pin Skip Hysteresis

50

−

mV

GATE DRIVE

TR

Output voltage rise-time @ CL = 1 nF, 10−90% of output signal

−

30

−

ns

TF

Output voltage fall-time @ CL = 1 nF, 10−90% of output signal

−

20

−

ns

ROH

Source resistance

−

10

−

W

ROL

Sink resistance

−

7.0

−

W

ISOURCE

Peak source current, VDRV = 0 V (guaranteed by design)

−

500

−

mA

ISINK

Peak sink current, VDRV = 12 V (guaranteed by design)

−

800

−

mA

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