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MP4503 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. MP4503
Description  High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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MP4503 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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MP4503
2002-11-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
ΣRth (j-a)
25
°C/W
Thermal resistance of junction to case
(4 devices operation, Tc = 25°C)
ΣRth (j-c)
5.0
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
TL
260
°C
Electrical Characteristics (Ta = 25°C) (NPN transistor)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0 A
20
µA
Collector cut-off current
ICEO
VCE = 80 V, IB = 0 A
20
µA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0 A
0.5
2.5
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0 A
100
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0 A
80
V
hFE (1)
VCE = 2 V, IC = 1 A
2000
DC current gain
hFE (2)
VCE = 2 V, IC = 3 A
1000
Collector-emitter
VCE (sat)
IC = 3 A, IB = 6 mA
1.5
Saturation voltage
Base-emitter
VBE (sat)
IC = 3 A, IB = 6 mA
2.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
60
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
30
pF
Turn-on time
ton
0.2
Storage time
tstg
1.5
Switching time
Fall time
tf
IB1 = −IB2 = 6 mA, duty cycle ≤ 1%
0.6
µs
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
IFM
4
A
Surge current
IFSM
t = 1 s, 1 shot
6
A
Forward voltage
VF
IF = 1 A, IB = 0 A
2.0
V
Reverse recovery time
trr
1.0
µs
Reverse recovery charge
Qrr
IF = 4 A, VBE = −3 V, dIF/dt = −50 A/µs
8
µC
20 µs
VCC = 30 V
Output
IB2
IB1
Input


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