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2SK756 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SK756
Description  Drain Current ?밒D=8A@ TC=25C
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SK756 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
2SK756
·ELECTRICAL CHARACTERISTICS (T
C=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID= 10mA
200
V
VGS(th)
Gate Threshold Voltage
VDS=10 VGS; ID=1mA
1.0
5.0
V
RDS(on)
Drain-Source On-stage Resistance
VGS=10V; ID= 5A
0.53
Ω
IGSS
Gate Source Leakage Current
VGS= ±16V;VDS= 0
±10
uA
IDSS
Zero Gate Voltage Drain Current
VDS=160V; VGS= 0
250
uA
VSD
Diode Forward Voltage
IF=8A; VGS=0
1.0
V
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