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CTH1804PS-T52 Datasheet(PDF) 2 Page - CT Micro International Corporation |
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CTH1804PS-T52 Datasheet(HTML) 2 Page - CT Micro International Corporation |
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2 / 11 page  CT Micro Rev 3 Proprietary & Confidential Page 2 Jun, 2015 CTH1804PS-T52 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters Test Conditions Min Note VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current @TC=25 ℃ -18.6 A 1 IDM Pulsed Drain Current -75 A 1 PD Total Power Dissipation @TC=25 ℃ 25 W 2 TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Thermal Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes R JC Thermal Resistance Junction-Case -- -- 5 oC /W 1,4 |
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