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CT851SLT3 Datasheet(PDF) 3 Page - CT Micro International Corporation |
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CT851SLT3 Datasheet(HTML) 3 Page - CT Micro International Corporation |
3 / 16 page CT Micro Rev 1 Proprietary & Confidential Page 3 Jun, 2015 CT851 Series DC Input 4-Pin Phototransistor Optocoupler Electrical Characteristics T A = 25°C (unless otherwise specified) Emitter Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VF Forward voltage IF=10mA - 1.2 1.4 V IR Reverse Current VR = 6V - - 5 µ A CIN Input Capacitance f= 1MHz - 30 - pF Detector Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes BVCEO Collector-Emitter Breakdown IC= 0.1mA 350 - - V BVECO Emitter-Collector Breakdown IE= 0.1mA 7 - - V ICEO Collector-Emitter Dark Current VCE= 200V, IF=0mA - - 100 nA Transfer Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes CTR Current Transfer Ratio IF= 5mA, VCE= 5V 50 - 600 % VCE(SAT) Collector-Emitter Saturation Voltage IF= 20mA, IC= 1mA - - 0.4 V RIO Isolation Resistance VIO= 500VDC 5x1010 - - CIO Isolation Capacitance f= 1MHz - 0.5 1 pF Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes tr Rise Time IC= 2mA, VCE= 2V, RL= 100 - 6 - µ s tf Fall Time - 8 - |
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