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CT3A01-R3 Datasheet(PDF) 4 Page - CT Micro International Corporation |
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CT3A01-R3 Datasheet(HTML) 4 Page - CT Micro International Corporation |
4 / 11 page CT Micro Rev 4 Proprietary & Confidential Page 4 Jun, 2015 CT3A01-R3 N-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage VGS = 0V, ID = 3.2 - - 1.2 V ISD Body Diode Continuous Current - - 3.2 A 1 Note: 1. The power dissipation is limited by 150 ℃ junction temperature. 2. Device mounted on a glass-epoxy board 3. The data tested by pulsed , pulse width 300 µs , duty cycle 2% 4. Thermal Resistance follow JESD51-3. FR-4 25.4 × 25.4 mm . 2 Oz Copper Actual Size |
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