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CT2N7002E-R3 Datasheet(PDF) 2 Page - CT Micro International Corporation |
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CT2N7002E-R3 Datasheet(HTML) 2 Page - CT Micro International Corporation |
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2 / 11 page  CT Micro Rev 3 Proprietary & Confidential Page 2 Jun, 2015 CT2N7002E-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters Ratings Units Notes VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current @TA=25 ℃ 500 mA 1 IDM Pulsed Drain Current 1200 mA 1 PD Total Power Dissipation @TA=25 ℃ 0.35 W 2 TSTG Storage Temperature Range -55 to 150 oC TJ Operating Junction Temperature Range -55 to 150 oC Thermal Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes R JA Thermal Resistance Junction-Ambient (t=10s) - 360 - oC /W 1,4 |
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