IRL1404

Rectifier utilize advanced processing techniques to achieve extremely

low on-resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The

low thermal resistance and low package cost of the TO-220 contribute to

its wide acceptance throughout the industry.

S

D

G

Parameter

Max.

Units

160

†

110

†

A

Pulsed Drain Current



640

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

620

mJ

Avalanche Current



95

A

Repetitive Avalanche Energy



20

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Thermal Resistance

†

Description

06/14/04

www.irf.com

1

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

(PCB Mounted)

‡

–––

62

TO-220AB

PD - 93854B