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TLP372 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP372 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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TLP371,TLP372 2002-09-25 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 µA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Collector -emitter breakdown voltage V(BR) CEO IC = 0.1 mA 300 ― ― V Emitter -collector breakdown voltage V(BR) ECO IE = 0.1 mA 0.3 ― ― V Collector -base breakdown voltage (TLP371) V(BR) CBO IC = 0.1 mA 300 ― ― V Emitter -base breakdown voltage (TLP371) V(BR) EBO IE = 0.1 mA 7 ― ― V VCE = 200 V ― 10 200 nA Collector dark current ICEO VCE = 200 V Ta = 85 °C ― ― 20 µA Collector dark current (TLP371) ICER VCE = 200 V Ta = 85 °C, RBE = 10 MΩ ― 0.5 10 µA Collector dark current (TLP371) ICBO VCE = 200 V ― 0.1 ― nA DC forward current gain (TLP371) hFE VCE = 5 V, IC = 10 mA ― 7000 ― ― Capacitance (collecter to emitter) CCE V = 0, f = 1 MHz ― 10 ― pF Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition MIn Typ. Max Unit Current transfer ratio IC / IF IF = 1 mA, VCE = 1 V 1000 4000 ― % Saturated CTR IC / IF (sat) IF = 10 mA, VCE = 1 V 500 ― ― % Base photo -current (TLP371) IPB IF = 1 mA, VCB = 1 V ― 6 ― µA IC = 10 mA, IF = 1 mA ― ― 1.0 Collector -emitter saturation voltage VCE (sat) IC = 100 mA, IF = 10 mA 0.3 ― 1.2 V |
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