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TLP372 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TLP372
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Transistor
Download  8 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP372 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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TLP371,TLP372
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
60
mA
Forward current derating (Ta ≥ 39°C)
∆IF / °C
-0.7
mA / °C
Peak forward current (100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector
-emitter voltage
VCEO
300
V
Collector
-base voltage (TLP371)
VCBO
300
V
Emitter
-collector voltage
VECO
0.3
V
Emitter
-base voltage (TLP371)
VEBO
7
V
Collector current
IC
150
mA
Power dissipation
PC
300
mW
Power dissipation derating (Ta ≥ 25°C)
∆PC / °C
-3.0
mW / °C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-55~100
°C
Lead soldering temperature (10 s)
Tsold
260
°C
Total package power dissipation
PT
350
mW
Total package power dissipation derating (Ta ≥ 25°C)
∆PT / °C
-3.5
mW / °C
Isolation voltage (AC, 1min., R.H. ≤ 60%)
(Note 1)
BVS
5000
Vrms
(Note 1): Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VCC
200
V
Forward current
IF
16
25
mA
Collector current
IC
120
mA
Operating temperature
Topr
-25
85
°C


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