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SI9407AEY Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI9407AEY
Description  P-Channel 60-V (D-S), 175C MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI9407AEY Datasheet(HTML) 4 Page - Vishay Siliconix

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Si9407AEY
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-4
Document Number: 70742
S-99445—Rev. C, 29-Nov-99
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
40
50
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
TJ – Temperature (_C)
Time (sec)
0.00
0.05
0.10
0.15
0.20
024
68
10
–0.4
–0.2
0.0
0.2
0.4
0.6
0.8
–50
–25
0
25
50
75
100
125
150
175
TJ = 175_C
2
1
0.1
0.01
10–3
10–2
10–1
110
30
ID = 3.5 A
ID = 250 mA
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
0.1
1
10
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 50_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
TJ = 25_C
10–4
0
10
30


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