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SI9407AEY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI9407AEY
Description  P-Channel 60-V (D-S), 175C MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI9407AEY Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si9407AEY
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70742
S-99445—Rev. C, 29-Nov-99
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–1
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –-60 V, VGS = 0 V
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = –-60 V, VGS = 0 V, TJ = 55_C
–10
mA
On-State Drain Currentb
ID(on)
VDS v –5 V, VGS = –10 V
–20
A
Drain-Source On-State Resistanceb
rDS(on)
VGS = –10 V, ID = 3.5 A
0.120
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = –4.5 V, ID = 3.1 A
0.150
W
Forward Transconductanceb
gfs
VDS = –15 V, ID = –3.5 A
8
S
Diode Forward Voltageb
VSD
IS = –2.5 A, VGS = 0 V
–1.2
V
Dynamica
Total Gate Charge
Qg
V30 V V
10 V I
3 5 A
18
30
C
Gate-Source Charge
Qgs
VDS = –30 V, VGS = –10 V, ID = –3.5 A
5
nC
Gate-Drain Charge
Qgd
2
Turn-On Delay Time
td(on)
V30 V R
30
W
8
15
Rise Time
tr
VDD = –30 V, RL = 30 W
I
1 A V
10 V R
6
W
10
20
Turn-Off Delay Time
td(off)
DD
,
L
ID ^ –1 A, VGEN = –10 V, RG = 6 W
35
50
ns
Fall Time
tf
12
25
Source-Drain Reverse Recovery Time
trr
IF = –2.5 A, di/dt = 100 A/ms
70
100
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.


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