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RN1201 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. RN1201
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Download  6 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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RN1201 Datasheet(HTML) 2 Page - Toshiba Semiconductor

   
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RN1201~RN1206
2001-06-07
2
Electrical Characteristics (Ta = 25
°°°°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 50V, IE = 0
100
nA
Collector cut-off current
RN1201~1206
ICEO
VCE = 50V, IB = 0
500
nA
RN1201
0.82
1.52
RN1202
0.38
0.71
RN1203
0.17
0.33
RN1204
VEB = 10V, IC = 0
0.082
0.15
RN1205
0.078
0.145
Emitter cut-off current
RN1206
IEBO
VEB = 5V, IC = 0
0.074
0.138
mA
RN1201
30
RN1202
50
RN1203
70
RN1204
80
RN1205
80
DC current gain
RN1206
hFE
VCE = 5V, IC = 10mA
80
Collector-emitter
saturation voltage
RN1201~1206
VCE (sat)
IC = 5mA,
IB = 0.25mA
0.1
0.3
V
RN1201
1.1
2.0
RN1202
1.2
2.4
RN1203
1.3
3.0
RN1204
1.5
5.0
RN1205
0.6
1.1
Input voltage (ON)
RN1206
VI (ON)
VCE = 0.2V, IC = 5mA
0.7
1.3
V
RN1201~1204
1.0
1.5
Input voltage (OFF)
RN1205~1206
VI (OFF)
VCE = 5V, IC = 0.1mA
0.5
0.8
V
Translation frequency
RN1201~1206
fT
VCE =10V, IC = 5mA
250
MHz
Collector output
capacitance
RN1201~1206
Cob
VCB = 10V, IE = 0,
f = 1MHz
3
6
pF
RN1201
3.29
4.7
6.11
RN1202
7
10
13
RN1203
15.4
22
28.6
RN1204
32.9
47
61.1
RN1205
1.54
2.2
2.86
Input Resistor
RN1206
R1
3.29
4.7
6.11
kΩ
RN1201~1205
0.9
1.0
1.1
RN1205
0.0421 0.0468 0.0515
Resistor Ratio
RN1206
R1/R2
0.09
0.1
0.11


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