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NCP1207P Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP1207P Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 18 page NCP1207 http://onsemi.com 4 ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C, VCC = 11 V unless otherwise noted) Rating Pin Symbol Min Typ Max Unit DYNAMIC SELF−SUPPLY VCC Increasing Level at which the Current Source Turns−off 6 VCCOFF 10.8 12 12.9 V VCC Decreasing Level at which the Current Source Turns−on 6 VCCON 9.1 10 10.6 V VCC Decreasing Level at which the Latch−off Phase Ends 6 VCClatch − 5.3 − V Internal IC Consumption, No Output Load on Pin 5, FSW = 60 kHz 6 ICC1 − 1.0 1.3 (Note 1) mA Internal IC Consumption, 1.0 nF Output Load on Pin 5, FSW = 60 kHz 6 ICC2 − 1.6 2.0 (Note 1) mA Internal IC Consumption in Latch−off Phase 6 ICC3 − 330 − mA INTERNAL STARTUP CURRENT SOURCE (TJ u 0°C) High−voltage Current Source, VCC = 10 V 8 IC1 4.3 7.0 9.6 mA High−voltage Current Source, VCC = 0 8 IC2 − 8.0 − mA DRIVE OUTPUT Output Voltage Rise−time @ CL = 1.0 nF, 10−90% of Output Signal 5 Tr − 40 − ns Output Voltage Fall−time @ CL = 1.0 nF, 10−90% of Output Signal 5 Tf − 20 − ns Source Resistance 5 ROH 12 20 36 W Sink Resistance 5 ROL 5.0 10 19 W CURRENT COMPARATOR (Pin 5 Unloaded) Input Bias Current @ 1.0 V Input Level on Pin 3 3 IIB − 0.02 − mA Maximum Internal Current Setpoint 3 ILimit 0.92 1.0 1.12 V Propagation Delay from Current Detection to Gate OFF State 3 TDEL − 100 160 ns Leading Edge Blanking Duration 3 TLEB − 380 − ns Internal Current Offset Injected on the CS Pin during OFF Time 3 Iskip − 200 − mA OVERVOLTAGE SECTION (VCC = 11 V) Sampling Delay after ON Time 1 Tsample − 4.5 − ms OVP Internal Reference Level 1 Vref 6.4 7.2 8.0 V FEEDBACK SECTION (VCC = 11 V, Pin 5 Loaded by 1.0 kW) Internal Pull−up Resistor 2 Rup − 20 − k W Pin 3 to Current Setpoint Division Ratio − Iratio − 3.3 − − Internal Soft−start − Tss − 1.0 − ms DEMAGNETIZATION DETECTION BLOCK Input Threshold Voltage (Vpin1 Decreasing) 1 VTH 35 50 90 mV Hysteresis (Vpin1 Decreasing) 1 VH − 20 − mV Input Clamp Voltage High State (Ipin 1 = 3.0 mA) Low State (Ipin 1 = −2.0 mA) 1 1 VCH VCL 8.0 −0.9 10 −0.7 12 −0.5 V V Demag Propagation Delay 1 Tdem − 210 − ns Internal Input Capacitance at Vpin1 = 1.0 V 1 Cpar − 10 − pF Minimum TOFF (Internal Blanking Delay after TON) 1 Tblank − 8.0 − ms Timeout After Last Demag Transition 1 Tout − 5.0 − ms Pin 1 Internal Impedance 1 Rint − 28 − k W 1. Max value at TJ = 0°C. |
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