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CY7C1351F-66AC Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY7C1351F-66AC
Description  4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1351F-66AC Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY7C1351F
Document #: 38-05210 Rev. *B
Page 10 of 15
Switching Characteristics Over the Operating Range[17, 18]
Parameter
Description
133 MHz
117 MHz
100 MHz
66 MHz
Unit
Min. Max. Min. Max. Min. Max. Min. Max.
tPOWER
VDD(Typical) to the first Access[13]
1
11
1
ms
Clock
tCYC
Clock Cycle Time
7.5
8.5
10
15
ns
tCH
Clock HIGH
2.5
3.0
4.0
5.0
ns
tCL
Clock LOW
2.5
3.0
4.0
5.0
ns
Output Times
tCDV
Data Output Valid After CLK Rise
6.5
7.5
8.0
11.0
ns
tDOH
Data Output Hold After CLK Rise
2.0
2.0
2.0
2.0
ns
tCLZ
Clock to Low-Z[14, 15, 16]
0
0
0
0
ns
tCHZ
Clock to High-Z14, 15, 16]
3.5
3.5
3.5
5.0
ns
tOEV
OE LOW to Output Valid
3.5
3.5
3.5
6.0
ns
tOELZ
OE LOW to Output Low-Z[14, 15, 16]
0
0
0
0
ns
tOEHZ
OE HIGH to Output High-Z[14, 15, 16]
3.5
3.5
3.5
6.0
ns
Set-up Times
tAS
Address Set-up Before CLK Rise
1.5
2.0
2.0
2.0
ns
tALS
ADV/LD Set-up Before CLK Rise
1.5
2.0
2.0
2.0
ns
tWES
WE, BW[A:D] Set-Up Before CLK Rise
1.5
2.0
2.0
2.0
ns
tCENS
CEN Set-up Before CLK Rise
1.5
2.0
2.0
2.0
ns
tDS
Data Input Set-up Before CLK Rise
1.5
2.0
2.0
2.0
ns
tCES
Chip Enable Set-Up Before CLK Rise
1.5
2.0
2.0
2.0
ns
Hold Times
tAH
Address Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
tALH
ADV/LD Hold after CLK Rise
0.5
0.5
0.5
0.5
ns
tWEH
WE, BW[A:D] Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
tCENH
CEN Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
tDH
Data Input Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.5
0.5
0.5
0.5
ns
Shaded areas contain advance information.
Notes:
13. This part has a voltage regulator internally; tpower is the time that the power needs to be supplied above VDD minimum initially before a read or write operation
can be initiated.
14. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
15. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve Three-state prior to Low-Z under the same system conditions
16. This parameter is sampled and not 100% tested.
17. Timing reference level is 1.5V when VDDQ =3.3V and is 1.25V when VDDQ = 2.5V.
18. Test conditions shown in (a) of AC Test Loads, unless otherwise noted.


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