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MTB080P06M3 Datasheet(PDF) 4 Page - Cystech Electonics Corp.

Part # MTB080P06M3
Description  P-Channel Enhancement Mode MOSFET
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Manufacturer  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB080P06M3 Datasheet(HTML) 4 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C069M3
Issued Date : 2016.04.19
Revised Date :
Page No. : 4/9
MTB080P06M3
CYStek Product Specification
Typical Characteristics
Typical Output Characteristics
0
2
4
6
8
10
12
14
16
18
02
46
8
1
-VDS, Drain-Source Voltage(V)
0
-10V, -9V,-8V,-7V,-6V,-5.5V,-5V
-4V
VGS=-3V
-3.5V
-4.5V
Normalized Brekdown Voltage vs Ambient
Temperature
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=-250
μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
10
100
1000
0.1
1
10
-ID, Drain Current(A)
VGS=-10V
VGS=-4.5V
Source Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02
46
8
1
-IS, Source Drain Current(A)
0
VGS=0V
Tj=25°C
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
50
100
150
200
250
300
350
400
450
500
02
4
6
8
1
-VGS, Gate-Source Voltage(V)
0
ID=-3A
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
VGS=-10V, ID=-3A
RDS(ON)@Tj=25°C : 83mΩ typ.


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