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2SK3390 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SK3390 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 7 page 2SK3390 Rev.0, Aug. 2001, page 3 of 7 Main Characteristics 40 30 20 10 0 50 100 150 200 Case Temperature Tc ( °C) Maximum Channel Power Dissipation Curve 2.5 2 1.5 1 0.5 0 2 34 56 7 Gate to Source Voltage V (V) Typical Transfer Characteristics V = 13.7 V DS Pulse Test GS 5 4 3 2 1 0 2 468 10 Typical Output Characteristics V = 4 V GS 6 V 5 V Pulse Test 8 V 10 V Drain to Source Voltage V (V) DS 7 V 9 V 0.01 1 0.3 0.03 0.1 0.03 0.1 0.3 1 3 10 0.01 Drain Current I (A) D Forward Transfer Admittance vs. Drain Current V = 13.7 V Pulse Test DS 3 10 Tc = - 25 °C 25 °C 75 °C Tc = 75 °C 25 °C - 25 °C |
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