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2SK3390 Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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2SK3390 Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 7 page 2SK3390 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-846 (Z) 1st. Edition Aug.2001 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 % min. (f = 836 MHz) • Compact package capable of surface mounting Outline RP8P 1 2 3 1. Gate 2. Source 3. Drain D G S 1 2 3 Note: Marking is “IX”. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. |
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