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TLP747JF Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TLP747JF
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP747JF Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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TLP747JF
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor
TLP747JF
Office Machine
Switching Power Supply
The TOSHIBA TLP747JF consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP747J.
(both condition and limits)
· Peak off−state voltage: 600V (min.)
· Trigger LED current: 15mA (max.)
· On−state current: 150mA (max.)
· UL recognized: UL1577, file No. E67349
· BSI approved: BS EN60065: 1994,
certificate No. 7364
BS EN60950: 1992,
certificate No. 7365
· SEMKO approved: SS4330784, certificate No. 9325163
No. 9522142
· Isolation voltage: 4000Vrms (min.)
· Option (D4) type
· VDE approved: DIN VDE0884 / 06.92,
certificate no. 74286, 91808
Maximum operating insulation voltage: 890, 1130VPK
Highest permissible over voltage: 6000, 8000VPK
(Note)
When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
· Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
· Conforming safety standards:
DIN 57 804. VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft Nov.84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
Pin Configurations (top view)
1
2
1 : Anode
2 : Cathode
3 : NC
4 : Cathode
5 : Anode
6 : Gate
6
5
34
Unit in mm
TOSHIBA
11
−7A802
Weight: 0.42g


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