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S5MB Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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S5MB Datasheet(HTML) 1 Page - Taiwan Memory Technology |
1 / 4 page CREAT BY ART FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.09 g (approximately) VRRM V VRMS V VDC V IF(AV) A TJ=25°C TJ=125°C TJ=25°C TJ=125°C TJ=25°C TJ=125°C CJ pF RθJL RθJA TJ °C TSTG °C Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V DC Document Number: DS_D1411017 Version: B15 DO-214AA (SMB) °C/W 13 47 10 250 Maximum reverse current @ rated VR 40 - 55 to +150 Typical thermal resistance Peak forward surge current, 1 ms single half sine-wave superimposed on rated load 200 150 540 290 1.1 400 600 800 1000 600 800 1000 S5 MB 400 280 420 560 700 S5GB - S5MB 5A, 400V - 1000V Surface Mount Glass Passivated Rectifiers - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Unit A Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL S5 GB Maximum instantaneous forward voltage (Note 1) @ 5 A VF Maximum average forward rectified current IFSM 5 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load S5 JB S5 KB Storage temperature range Operating junction temperature range - 55 to +150 Taiwan Semiconductor Typical junction capacitance (Note 2) V IR μA PARAMETER |
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