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S1J-K Datasheet(PDF) 2 Page - Taiwan Memory Technology |
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S1J-K Datasheet(HTML) 2 Page - Taiwan Memory Technology |
2 / 4 page PART NO. Note 2: Whole series with green compound Version: B1603 RATINGS AND CHARACTERISTICS CURVES (T A=25°C unless otherwise noted) S1D-K - S1M-K Taiwan Semiconductor ORDERING INFORMATION PACKING CODE SUFFIX PACKAGE PREFERRED PART NO. PACKING CODE SUFFIX R3 PACKING G SMA 1,800 / 7" Plastic reel S1M-K R3G G SMA 7,500 / 13" Paper reel Green compound PACKING CODE R2 R3 PART NO. S1M-K Note 1: "x" defines voltage from 200V (S1D-K) to 1000V (S1M-K) EXAMPLE DESCRIPTION PACKING CODE S1x-K (Note 1, 2) 0 0.2 0.4 0.6 0.8 1 1.2 0 255075 100 125 150 175 LEAD TEMPERATURE (oC) FIG.1 FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD 1 10 100 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2 TYPICAL REVERSE CHARACTERISTICS TJ=125°C TJ=75°C TJ=25°C 0.1 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 FORWARD VOLTAGE (V) FIG. 4 TYPICAL FORWARD CHARACTERISTICS Pulse Width=300μs 1% Duty Cycle |
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